Recent advances in 3- to 10-nm quantum optical lithography-Reference-Cited by-同舟云学术

Recent advances in 3- to 10-nm quantum optical lithography

Published:2019-05-07 Issue:02 Volume:18 Page:1
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Pavel Eugen¹,Prodan Gabriel²,Marinescu Virgil³,Trusca Roxana⁴

Affiliation:

1. Storex Technologies, Bucharest

2. Ovidius University of Constanta, Constanta

3. National Institute for R&D in Electrical Engineering, Bucharest

4. METAV R&D, Bucharest

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Resolution Limits of Electron-Beam Lithography toward the Atomic Scale

2. Sub-10-nm structures written in ultra-thin HSQ resist layers using electron-beam lithography

3. Fabrication of <5 nm width lines in poly(methylmethacrylate) resist using a water:isopropyl alcohol developer and ultrasonically-assisted development

4. Radiolysis and resolution limits of inorganic halide resists

5. Growth behavior near the ultimate resolution of nanometer-scale focused electron beam-induced deposition

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