The use of EUV lithography to produce demonstration devices-Reference-Cited by-同舟云学术

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The use of EUV lithography to produce demonstration devices

Published:2008-03-14 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

LaFontaine Bruno,Deng Yunfei,Kim Ryoung-Han,Levinson Harry J.,McGowan Sarah,Okoroanyanwu Uzodinma,Seltmann Rolf,Tabery Cyrus,Tchikoulaeva Anna,Wallow Tom,Wood Obert,Arnold John,Canaperi Don,Colburn Matthew,Kimmel Kurt,Koay Chiew-Seng,Mclellan Erin,Medeiros Dave,Rao Satyavolu Papa,Petrillo Karen,Yin Yunpeng,Mizuno Hiroyuki,Bouten Sander,Crouse Michael,van Dijk Andre,van Dommelen Youri,Galloway Judy,Han Sang-In,Kessels Bart,Lee Brian,Lok Sjoerd,Niekrewicz Brian,Pierson Bill,Routh Robert,Schmit-Weaver Emil,Cummings Kevin,Word James

Publisher

SPIE

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-NA EUV lithography: current status and outlook for the future;Japanese Journal of Applied Physics;2022-04-20

2. Silicon Infiltration into Functional Polymer for Nano-scale Pattern Development;Journal of Photopolymer Science and Technology;2017

3. EUV patterning successes and frontiers;Extreme Ultraviolet (EUV) Lithography VII;2016-03-18

4. Evaluating printability of buried native extreme ultraviolet mask phase defects through a modeling and simulation approach;Journal of Micro/Nanolithography, MEMS, and MOEMS;2015-05-15

5. Evaluating printability of buried native EUV mask phase defects through a modeling and simulation approach;SPIE Proceedings;2015-03-16

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