Fundamentals of EUV resist-inorganic hardmask interactions-Reference-Cited by-同舟云学术

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Fundamentals of EUV resist-inorganic hardmask interactions

Published:2017-03-27 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Goldfarb Dario L.¹,Glodde Martin¹,De Silva Anuja²,Sheshadri Indira²,Felix Nelson M.²,Lionti Krystelle³,Magbitang Teddie³

Affiliation:

1. IBM Thomas J. Watson Research Ctr. (United States)

2. IBM Semiconductor Technology Research (United States)

3. IBM Almaden Research Ctr. (United States)

Publisher

SPIE

Reference40 articles.

1. Pattern collapse mitigation strategies for EUV lithography;Goldfarb,2012

2. Silicon containing polymers in applications for high NA 193 nm lithography processes;Burns,2006

3. Driving down defect density in composite EUV patterning film stacks;Meli,2017

4. Development of Ti containing hardmasks through PEALD deposition;De Silva,2017

5. Progress in Spin-on Hard Mask Materials for Advanced Lithography

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1. Functional underlayers, surface priming, and multilayer stacks to improve dose and adhesion of EUV photoresists;Advances in Patterning Materials and Processes XLI;2024-04-09

2. Novel assist layers to enhance EUV lithography performance of photoresists on different substrates;Advances in Patterning Materials and Processes XL;2023-05-01

3. Enhancing Performance and Function of Polymethacrylate Extreme Ultraviolet Resists Using Area-Selective Deposition;Chemistry of Materials;2023-02-23

4. Adhesion and collapse of extreme ultraviolet photoresists and the role of underlayers;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-07-01

5. Thickness dependence of properties of EUV underlayer thin films;Advances in Patterning Materials and Processes XXXIX;2022-05-25

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