Pattern defect reduction and LER improvement of chemo-epitaxy DSA process

Author:

Muramatsu Makoto1,Nishi Takanori1,You Gen1,Saito Yusuke1,Ido Yasuyuki1,Oikawa Noriaki2,Tobana Toshikatsu2,Ito Kiyohito2,Morikita Shinya2,Kitano Takahiro3

Affiliation:

1. Tokyo Electron Kyushu Ltd. (Japan)

2. Tokyo Electron Miyagi Ltd. (Japan)

3. Tokyo Electron Ltd. (Japan)

Publisher

SPIE

Reference23 articles.

1. All track directed self-assembly of block copolymers: process flow and origin of defects;Rincon Degadillo,2012

2. Defect source analysis of directed self-assembly process (DSA of DSA);Rincon Degadillo,2013

3. Gronheid, R., Rincon Degadillo, P. A., Pathangi, H., Van den Heuvel, D., Parnell, D., Chan, B. T., Lee, Y. T., Van Look, L., Cao, Y., Her, Y., Lin, G., Harukawa, R., Nagaswami, V., D'Urzo, L., Somervell, M., Nealey, P., “Defect reduction and defect stability in IMEC's 14nm half-pitch chemo-epitaxy flow,” Proc. SPIE 9049, 904905 (2014)

4. Defect mitigation and root cause studies in IMEC's 14nm half-pitch chemo-epitaxy DSA flow;Pathangi,2015

5. Pattern scaling with directed self assembly through lithography and etch process integration;Rathsack,2012

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