Modeling of NTD resist shrinkage-Reference-Cited by-同舟云学术

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Modeling of NTD resist shrinkage

Published:2017-03-27 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Mülders Thomas¹,Stock Hans-Jürgen¹,Küchler Bernd¹,Klostermann Ulrich¹,Gao Weimin¹,Demmerle Wolfgang¹

Affiliation:

1. Synopsys GmbH (Germany)

Publisher

SPIE

Reference15 articles.

1. Experimental Characterization of NTD Resist Shrinkage;Küchler,2017

2. Physical Modeling of Deprotection Induced Thickness Loss;Jakatar,1999

3. Determining Free Volume Changes During The PEB and PAB of a Chemically Amplified Resist;Burns,2000

4. Investigating deprotection-induced shrinkage and retro-grade sidewalls in NTD resists;Pistor,2015

5. A Physics-based Model for Negative Tone Development Materials

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1. Cluster sampling and scalable Bayesian optimization with constraints for negative tone development resist model calibration;Optics Express;2024-04-16

2. Selection approach of critical patterns for calibrating the physical resist model based on spectrum coverage;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-10-26

3. Stochastic Modeling and Local CD Uniformity Comparison between Negative Metal-Based, Negative- and Positive-Tone Development EUV Resists;IEICE Transactions on Electronics;2022-01-01

4. Resist shrinkage during development: rigorous simulations and first compact model for OPC;Optical Microlithography XXXIII;2020-03-23

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