Stochastic Modeling and Local CD Uniformity Comparison between Negative Metal-Based, Negative- and Positive-Tone Development EUV Resists
Author:
Affiliation:
1. Synopsys GmbH
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/transele/E105.C/1/E105.C_2021ECP5010/_pdf
Reference32 articles.
1. [1] P. De Bisschop, “Stochastic printing failures in extreme ultraviolet Lithography,” J. Micro/Nanolith. MEMS MOEMS, vol.17, no.4, 041011, Oct.-Dec. 2018. 10.1117/1.jmm.17.4.041011
2. [2] D. De Simone, Y. Vesters, A. Shehzad, G. Vandenberghe, P. Foubert, C. Beral, D. Van Den Heuvel, M. Mao, and F. Lazzarino, “Exploring the readiness of EUV photo materials for patterning advanced technology nodes,” Proc. SPIE, 01430R, Extreme Ultraviolet (EUV) Lithography VIII, 2017. 10.1117/12.2258220
3. [3] P. De Bisschop, “Stochastic effects in EUV lithography: random, local CD variability, and printing failures,” J. Micro/Nanolith. MEMS MOEMS, vol.16, no.4, 041013, Oct.-Dec. 2017. 10.1117/1.jmm.16.4.041013
4. [4] L. Van Look, J. Bekaert, A. Frommhold, E. Hendrickx, G. Rispens, and G. Schiffelers, “OPTIMIZATION AND STABILITY OF CD VARIABILITY IN PITCH 40 NM CONTACT HOLES ON NXE:3300,” Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography, 2018. 10.1117/12.2501797
5. [5] I. Kamohara, W. Gao, U. Klostermann, T. Schmöller, W. Demmerle, K. Lucas, D. De Simone, E. Hendrickx, and G. Van den Berghe, “Experimental validation of stochastic modeling for negative-tone develop EUV resists,” Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, March 2015. 10.1117/12.2085506
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