Influence of the AP MOVPE process parameters on properties of (In, Ga)(As, N)/ GaAs heterostructures for photovoltaic applications-Reference-Cited by-同舟云学术

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Influence of the AP MOVPE process parameters on properties of (In, Ga)(As, N)/ GaAs heterostructures for photovoltaic applications

Published:2013-07-25 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Ściana Beata,Radziewicz Damian,Pucicki Damian,Serafińczuk Jarosław,Dawidowski Wojciech,Bielak Katarzyna,Badura Mikołaj,Gelczuk Łukasz,Tłaczała Marek,Latkowska Magdalena,Kamyczek Paulina,Kováč Jaroslav,Florovič Martin,Vincze Andrej

Publisher

SPIE

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of Effective Mass in InGaAsN/GaAs Quantum Wells Using Transient Spectroscopy;Materials;2022-10-30

2. Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques;Applied Surface Science;2018-03

3. DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions;Materials Science in Semiconductor Processing;2018-02

4. A cross-sectional scanning capacitance microscopy characterization of GaAs based solar cell structures;Crystal Research and Technology;2017-05-26

5. The influence of top electrode of InGaAsN/GaAs solar cell on their electrical parameters extracted from illuminated I–V characteristics;Solid-State Electronics;2016-06

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