A cross-sectional scanning capacitance microscopy characterization of GaAs based solar cell structures-Reference-Cited by-同舟云学术

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A cross-sectional scanning capacitance microscopy characterization of GaAs based solar cell structures

Published:2017-05-26 Issue:6 Volume:52 Page:1700019
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Szyszka Adam¹,Dawidowski Wojciech¹,Stafiniak Andrzej¹,Prażmowska Joanna¹,Ściana Beata¹,Tłaczała Marek¹

Affiliation:

1. Faculty of Microsystem Electronics and Photonics; Wrocław University of Science and Technology; Janiszewskiego 11/17 50-372 Wrocław Poland

Funder

European Regional Development Fund

Narodowe Centrum Badań i Rozwoju

Narodowe Centrum Nauki

Politechnika Wrocławska

Slovak-Polish International Cooperation Program

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference17 articles.

1. Detailed Balance Limit of Efficiency of p-n Junction Solar Cells;Shockley;J. Appl. Phys.,1961

2. III-V multijunction solar cells for concentrating photovoltaics;Cotal;Energy Environ. Sci.,2009

3. Mi-Chang Chang, pn-junction delineation in Si devices using scanning capacitance spectroscopy;Edwards;J. Appl. Phys.,2000

4. Scanning capacitance spectroscopy on n+−p asymmetrical junctions in multicrystalline Si solar cells;Jiang;J. Appl. Phys.,2011

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