Utilization of spin-on and reactive ion etch critical dimension shrink with double patterning for 32 nm and beyond contact level interconnects-Reference-Cited by-同舟云学术

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Utilization of spin-on and reactive ion etch critical dimension shrink with double patterning for 32 nm and beyond contact level interconnects

Published:2009-03-13 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Advances in Resist Materials and Processing Technology XXVI
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Author:

Petrillo Karen,Horak Dave,Fan Susan,McLellan Erin,Colburn Matt,Metz Andrew,Dunn Shannon,Hetzer Dave,Cantone Jason,Ueda Kenichi,Winter Tom,Balasubramaniam Vaidyanathan,Tang Cherry,Slezak Mark

Publisher

SPIE

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review and perspective of dry etching and deposition process modeling of Si and Si dielectric films for advanced CMOS device applications;Japanese Journal of Applied Physics;2024-08-01

2. Modeling and simulation of coverage and film properties in deposition process on large-scale pattern using statistical ensemble method;Japanese Journal of Applied Physics;2023-03-27

3. Influence of hydrogen in silicon nitride films on the surface reactions during hydrofluorocarbon plasma etching;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-11

4. Unexpected impact of RIE gases on lithographic films;SPIE Proceedings;2017-03-27

5. Chemical trimming overcoat: an enhancing composition and process for 193nm lithography;SPIE Proceedings;2016-03-25

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