1. Silicon containing polymer in applications for 193 nm high NA lithography processes;Burns,2006
2. Fundamentals of EUV resist-inorganic hardmask interactions;Goldfarb,2017
3. Utilization of spin-on and reactive ion etch critical dimension shrink with double patterning for 32 nm and beyond contact level interconnects;Petrillo,2009
4. Systematic Studies on Reactive Ion Etch-Induced Deformations of Organic Underlayers;Glodde,2011
5. Sub-45nm Resist Process Using Stacked-Mask Process;Seino,2008