Author:
Sherwin Stuart,Neureuther Andrew,Naulleau Patrick
Reference5 articles.
1. Recent developments in EUV reflectometry at the Advanced Light Source
2. X-Ray Interactions: Photoabsorption, Scattering, Transmission, and Reflection at E = 50-30,000 eV, Z = 1-92
3. Experimental verification of EUV mask limitations at high numerical apertures
4. C. Mack, Fundamental principles of optical lithography: the science of microfabrication, John Wiley & Sons, 2008.
5. K. Adam, Domain Decomposition Methods for the Electromagnetic Simulation of Scattering from Three-Dimensional Structures with Applications in Lithography. PhD thesis, EECS Department, University of California, Berkeley, 2001.
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Perspectives and tradeoffs of absorber materials for high NA EUV lithography;Journal of Micro/Nanolithography, MEMS, and MOEMS;2020-10-01
2. Measuring the Phase of EUV Photomasks;International Conference on Extreme Ultraviolet Lithography 2019;2019-11-11
3. Advanced multilayer mirror design to mitigate EUV shadowing;Extreme Ultraviolet (EUV) Lithography X;2019-03-26
4. EUV mask characterization with actinic scatterometry;International Conference on Extreme Ultraviolet Lithography 2018;2018-10-03