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Edge roughness characterization of advanced patterning processes using power spectral density analysis (PSD)

  • Published:2016-03-28 Issue: Volume: Page:
  • ISSN:0277-786X
  • Container-title:SPIE Proceedings
  • language:
  • Short-container-title:

Author:

Levi Shimon,Schwarzband Ishai,Kris Roman,Adan Ofer,Shi Elly,Zhang Ying,Zhou Kevin

Publisher

SPIE

Reference3 articles.

1. Roughness characterization of gate all around Silicon NanoWire fabrication;Levi,2012

2. 22nm half-pitch patterning by CVD spacer self alignment double patterning (SADP);Bencher,2008

3. Innovative self-aligned triple patterning for 1x half pitch using single “spacer deposition-spacer etch” step;Mebarki,2011

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pattern Roughness Analyses in Advanced Lithography: Power Spectral Density and Autocorrelation;2020 International Workshop on Advanced Patterning Solutions (IWAPS);2020-11-05

2. Research on characterization of anisotropic and isotropic processing surfaces by characteristic roughness;Journal of Materials Processing Technology;2020-01

3. Line edge roughness metrology: recent challenges and advances toward more complete and accurate measurements;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-10-13

4. Computational nanometrology of line-edge roughness: noise effects, cross-line correlations and the role of etch transfer;Advanced Etch Technology for Nanopatterning VII;2018-03-20

5. Multifractal analysis of line-edge roughness;Metrology, Inspection, and Process Control for Microlithography XXXII;2018-03-13
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