Experimental characterization of NTD resist shrinkage-Reference-Cited by-同舟云学术

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Experimental characterization of NTD resist shrinkage

Published:2017-03-17 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Küchler Bernd¹,Mülders Thomas¹,Taoka Hironobu¹,Gao Weimin¹,Klostermann Ulrich¹,Kamimura Sou²,Grozev Grozdan²,Yoshidome Masahiro²,Shirakawa Michihiro²,Li Waikin³

Affiliation:

1. Synopsys GmbH (Germany)

2. FUJIFILM Corp. (Japan)

3. IMEC (Belgium)

Publisher

SPIE

Reference13 articles.

1. Fundamental differences between positive and negative tone imaging;Mack,1992

2. Modeling of NTD resist shrinkage;Mülders,2017

3. Role of 3D photo-resist simulation for advanced technology nodes;Samy,2013

4. Synopsys Sentaurus Lithography, release 2016.12, https://www.synopsys.com/silicon/mask-synthesis/sentaurus-lithography.html

5. Resist material for negative tone development process;Tarutani,2010

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cluster sampling and scalable Bayesian optimization with constraints for negative tone development resist model calibration;Optics Express;2024-04-16

2. Stochastic Modeling and Local CD Uniformity Comparison between Negative Metal-Based, Negative- and Positive-Tone Development EUV Resists;IEICE Transactions on Electronics;2022-01-01

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