New wafer shape measurement technique for 300mm blank vertically held silicon wafer-Reference-Cited by-同舟云学术

New wafer shape measurement technique for 300mm blank vertically held silicon wafer

Published:2023-03-08 Issue: Volume: Page:
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Container-title:Photonic Instrumentation Engineering X
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Author:

Trujillo-Sevilla Juan M.,Casanova-González Óscar,Roqué-Velasco Alex,González Pardo Javier,Ramos-Rodríguez José Manuel,Gaudestad Jan O.

Publisher

SPIE

Reference9 articles.

1. Role Of Process-induced Wafer Geometry Changes In Advanced Semiconductor Manufacturing;Turner,2014

2. Full Wafer Stress Metrology for Dielectric Film Characterization: Use Case;Brouzet,2019

3. Wafer-shape based in-plane distortion predictions using superfast 4G metrology;Dijk,2017

4. Determining local residual stresses from high resolution wafer geometry measurements;Gong;Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, Pennsylvania,2013

5. SEMI M1 “SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS”

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