Free-electron laser emission architecture impact on extreme ultraviolet lithography-Reference-Cited by-同舟云学术

Free-electron laser emission architecture impact on extreme ultraviolet lithography

Published:2017-10-30 Issue:04 Volume:16 Page:1
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Hosler Erik R.¹,Wood Obert R.¹,Barletta William A.²

Affiliation:

1. GLOBALFOUNDRIES, Malta, New York

2. Massachusetts Institute of Technology, Department of Physics, Cambridge, Massachusetts

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. EUV lithography scanner for sub-8nm resolution

2. Separating the optical contributions to line-edge roughness in EUV lithography using stochastic simulations

3. EUVL exposure tools for HVM: status and outlook;Fomenkov,2016

4. 250W LPP-EUV light source development for semiconductor HVM;Yamazaki,2016

5. NXE pellicle: offering a EUV pellicle solution to the industry

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-NA EUV lithography: current status and outlook for the future;Japanese Journal of Applied Physics;2022-04-20

2. Tapered helical undulator system for high efficiency energy extraction from a high brightness electron beam;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2022-04

3. Dependence of dose rate on the sensitivity of the resist under ultra-high flux extreme ultraviolet (EUV) pulse irradiation;Applied Physics Express;2021-05-12

4. Subthreshold Erosion of an Organic Polymer Induced by Multiple Shots of an X-Ray Free-Electron Laser;Physical Review Applied;2020-09-22