Inductively coupled plasma etching of germanium tin for the fabrication of photonic components-Reference-Cited by-同舟云学术

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Inductively coupled plasma etching of germanium tin for the fabrication of photonic components

Published:2017-02-20 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Silicon Photonics XII
language:
Short-container-title:

Author:

Milord L.¹,Aubin J.¹,Gassenq A.²,Tardif S.²,Guilloy K.²,Pauc N.²,Rothman J.¹,Chelnokov A.¹,Hartmann J. M.¹,Calvo V.²,Reboud V.¹

Affiliation:

1. CEA-LETI (France)

2. CEA-INAC (France)

Publisher

SPIE

Reference21 articles.

1. Lasing in direct-bandgap GeSn alloy grown on Si

2. Germanium-Tin Alloys: Applications in Microelectronics and Photonics

3. Band structure and instability of Ge1−xSnx alloys

4. Direct-gap group IV semiconductors based on tin

5. Optically pumped GeSn Microdisk Lasers on Si;Stange,2016

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of the growth strategy and device fabrication on the alloy homogeneity in optoelectronic grade Sn-rich GeSn;Materials Science and Engineering: B;2021-02

2. Fabrication of Germanium Tin Microstructures Through Inductively Coupled Plasma Dry Etching;IEEE Transactions on Nanotechnology;2021

3. Mid-Infrared GeSn-Based LEDs with Sn Content up to 16%;2019 IEEE 16th International Conference on Group IV Photonics (GFP);2019-08

4. 2D hexagonal photonic crystal GeSn laser with 16% Sn content;Applied Physics Letters;2018-07-30

5. A comparative study of selective dry and wet etching of germanium–tin (Ge1−xSnx) on germanium;Semiconductor Science and Technology;2018-07-12

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