Single mask solution to pattern BLP and SNLP using 0.33NA EUV for next-generation DRAM manufacturing-Reference-Cited by-同舟云学术

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Single mask solution to pattern BLP and SNLP using 0.33NA EUV for next-generation DRAM manufacturing

Published:2022-12-01 Issue: Volume: Page:
ISSN:
Container-title:International Conference on Extreme Ultraviolet Lithography 2022
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Author:

Sah Kaushik,Cross Andrew,Das Sayantan,Fallica Roberto,Lee Jeonghoon,Kim Ryan Ryoung,Halder Sandip,Maguire Ethan,Armeanu Ana-Maria,Sears Monica,Lafferty Neal,Liubich Vlad,Wei Chih-i,Fenger Germain

Publisher

SPIE

Reference5 articles.

1. EUV based multi-patterning schemes for advanced DRAM nodes

2. Value of EUV lithography for DRAM manufacturing

3. EUV contact-hole local CD uniformity optimization for DRAM storage node application (Conference Presentation)

4. Extending EUV lithography for DRAM applications

5. TechInsights;Jeongdong,2021

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single mask solution to pattern DRAM LILP layer at 42nm pitch using EUV CAR photoresist;Optical and EUV Nanolithography XXXVII;2024-04-10

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