CD metrology for the 45-nm and 32-nm nodes-Reference-Cited by-同舟云学术

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CD metrology for the 45-nm and 32-nm nodes

Published:2004-05-24 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Metrology, Inspection, and Process Control for Microlithography XVIII
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Author:

Rice Bryan J.,Cao Heidi B.,Chaudhuri Ovijut,Grumski Michael G.,Harteneck Bruce D.,Liddle Alex,Olynick Deidre,Roberts Jeanette M.

Publisher

SPIE

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-line E-beam metrology and defect inspection: industry reflections, hybrid E-beam opportunities, recommendations and predictions;SPIE Proceedings;2017-03-28

2. In-line E-beam wafer metrology and defect inspection: the end of an era for image-based critical dimensional metrology? New life for defect inspection;SPIE Proceedings;2013-04-10

3. Improving the measurement performance of angle-resolved scattermetry by use of pupil optimization;SPIE Proceedings;2012-03-29

4. Critical Dimension Measurement Using OCD Spectroscopy for Gate and STI AEI Structures;ECS Transactions;2012-03-16

5. Immersion scatterometry for improved nano-scale topography measurements;physica status solidi (a);2008-04

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