In-line E-beam metrology and defect inspection: industry reflections, hybrid E-beam opportunities, recommendations and predictions

Author:

Solecky Eric1,Rasafar Allen1,Cantone Jason1,Bunday Benjamin1,Vaid Alok1,Patterson Oliver1,Stamper Andrew1,Wu Kevin1,Buengener Ralf1,Weng Weihao1,Dai Xintuo1

Affiliation:

1. GLOBALFOUNDRIES Inc. (United States)

Publisher

SPIE

Reference26 articles.

1. Eric Solecky et al, “In-line E-beam wafer metrology and defect inspection: the end of an era for image-based critical dimensional metrology? New life for defect inspection”, Invited paper, SPIE Proceedings Vol. 8681, Metrology, Inspection, and Process Control for Microlithography XXVII.

2. For Figures 2, 7 and 8, this information presents public industry data and is for historical purposes only. These figures are not a reflection of GLOBALFOUNDRIES current or future roadmap nor is intended to make any endorsement of a supplier.

3. Evolution and Future of Critical Dimension Measurement System for Semiconductor Processes;Ikegami,2011

4. B. Rice, et al, “CD Metrology for the 45nm and 32nm Nodes”, Proceedings of SPIE, Metrology, Inspection, and Process Control for Microlithography XVIII. Vol. 5375, 0277–786X/04; doi: 10.1117/12.536071

5. Hidehito Obayashi, “In celebration of the 60th anniversary of Journal of Electron Microscopy”, Oxford Journals: Life Sciences & Mathematics & Physical Sciences: Microscopy, Volume 60, Issue 1 Pp. S283–S286

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