1. Eric Solecky et al, “In-line E-beam wafer metrology and defect inspection: the end of an era for image-based critical dimensional metrology? New life for defect inspection”, Invited paper, SPIE Proceedings Vol. 8681, Metrology, Inspection, and Process Control for Microlithography XXVII.
2. For Figures 2, 7 and 8, this information presents public industry data and is for historical purposes only. These figures are not a reflection of GLOBALFOUNDRIES current or future roadmap nor is intended to make any endorsement of a supplier.
3. Evolution and Future of Critical Dimension Measurement System for Semiconductor Processes;Ikegami,2011
4. B. Rice, et al, “CD Metrology for the 45nm and 32nm Nodes”, Proceedings of SPIE, Metrology, Inspection, and Process Control for Microlithography XVIII. Vol. 5375, 0277–786X/04; doi: 10.1117/12.536071
5. Hidehito Obayashi, “In celebration of the 60th anniversary of Journal of Electron Microscopy”, Oxford Journals: Life Sciences & Mathematics & Physical Sciences: Microscopy, Volume 60, Issue 1 Pp. S283–S286