Fundamental investigation of negative tone development (NTD) for the 22nm node (and beyond)-Reference-Cited by-同舟云学术

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Fundamental investigation of negative tone development (NTD) for the 22nm node (and beyond)

Published:2011-03-17 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Landie Guillaume,Xu Yongan,Burns Sean,Yoshimoto Kenji,Burkhardt Martin,Zhuang Larry,Petrillo Karen,Meiring Jason,Goldfarb Dario,Glodde Martin,Scaduto Anthony,Colburn Matthew,Desisto Jason,Bae Young,Reilly Michael,Andes Cecily,Vohra Vaishali

Publisher

SPIE

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Necessity of resist model in source mask optimization for negative tone development process;Journal of Micro/Nanolithography, MEMS, and MOEMS;2017-09-13

5. Statistical Timing Analysis Considering Device and Interconnect Variability for BEOL Requirements in the 5-nm Node and Beyond;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2017-05

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