Depth profile analysis of native oxide layer on GaAs (100) surface-Reference-Cited by-同舟云学术

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Depth profile analysis of native oxide layer on GaAs (100) surface

Published:2014-12-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:International Symposium on Optoelectronic Technology and Application 2014: Laser Materials Processing; and Micro/Nano Technologies
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Author:

Cheng Xing,Shi Feng,Cheng Hongchang,Niu Sen,Wang Long,Miao Zhuang,Chen Chang

Publisher

SPIE

Reference10 articles.

1. Sadao A., [Properties of Semiconductor Alloys: Group-IV, III–V and II–VI Semiconductors,] John Wiley & Sons, Ltd., Chichester, 133–135, 365–367 (2009).

2. An X-ray photoelectron spectroscopy study of the oxides of GaAs

3. Angle-resolved XPS structural investigation of GaAs surfaces

4. Studies of Oxidation on GaAs(100) Surface by XPS;Ren,2003

5. An X-ray photoelectron spectroscopy study of chemically etched GaAs

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2. Elemental arsenic in the natural oxide on the MBE GaAs surface;Applied Surface Science;2020-02

3. Arsenic Diffusion in the Natural Oxidation of the Heavily Defected GaAs Surface;Semiconductors;2019-12

4. Modification of the GaAs native oxide surface layer into the layer of the Ga2O3 dielectric by an Ar+ ion beam;Surface and Coatings Technology;2018-06

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