Arsenic Diffusion in the Natural Oxidation of the Heavily Defected GaAs Surface

Author:

Mikoushkin V. M.,Solonitsyna A. P.,Makarevskaya E. A.,Novikov D. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Fabrication of GaAs Devices, Ed. by A. G. Baca and C. I. H. Ashby (IET, London, UK, 2005).

2. C. D. Thurmond, G. P. Schwartz, G. W. Kammlott, and B. Schwartz, Solid State Sci. Technol. 127, 1366 (1980).

3. N. A. Torkhov, Semiconductors 37, 1177 (2003).

4. N. N. Bezryadin, G. I. Kotov, I. N. Arsentyev, Yu. N. Vlasov, and A. A. Starodubtsev, Semiconductors 46, 736 (2012).

5. T. Ishikawa and H. Ikoma, Jpn. J. Appl. Phys. 31, 3981 (1992).

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