An X-ray photoelectron spectroscopy study of chemically etched GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference16 articles.
1. X‐ray photoelectron spectroscopic study of the oxide removal mechanism of GaAs (100) molecular beam epitaxial substrates ininsituheating
2. XPS analysis of (100) GaAs surfaces after applying a variety of technology-etchants
3. XPS study of chemically etched GaAs and InP
4. Chemical preparation of GaAs surfaces and their characterization by Auger electron and x‐ray photoemission spectroscopies
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1. Depth profile analysis of native oxide layer on GaAs (100) surface;International Symposium on Optoelectronic Technology and Application 2014: Laser Materials Processing; and Micro/Nano Technologies;2014-12-18
2. Characterization study of native oxides on GaAs(100) surface by XPS;SPIE Proceedings;2013-08-16
3. Formation of a native-oxide structure on the surface of n-GaAs under natural oxidation in air;Semiconductors;2003-10
4. Elimination of interface states in the GaAs band-gap by cyanide treatment: XPS measurements under bias;Surface Science;2003-04
5. Oxide formation during etching of gallium arsenide;Corrosion Science;2002-03
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