Modeling and experiments of non-telecentric thick mask effects for EUV lithography-Reference-Cited by-同舟云学术

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Modeling and experiments of non-telecentric thick mask effects for EUV lithography

Published:2009-03-13 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Alternative Lithographic Technologies
language:
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Author:

McIntyre Gregory,Koay Chiew-seng,Burkhardt Martin,Mizuno Hiro,Wood Obert

Publisher

SPIE

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ru/Ta bilayer approach to EUV mask absorbers: Experimental patterning and simulated imaging perspective;Micro and Nano Engineering;2023-09

2. Extreme ultraviolet pellicle wrinkles influence on mask 3D effects: experimental demonstration;Applied Optics;2023-08-11

3. Fast aerial image model for EUV lithography using the adjoint fully convolutional network;Optics Express;2022-03-25

4. Nanoscale focused electron beam induced etching of nickel using a liquid reactant;Nanotechnology;2020-07-27

5. Optical constants and absorption properties of Te and TeO thin films in the 13-14 nm spectral range;Optics Express;2020-04-16

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