Improving mask registration and wafer overlay control using an ultrashort pulsed laser-Reference-Cited by-同舟云学术

Improving mask registration and wafer overlay control using an ultrashort pulsed laser

Published:2016-06-09 Issue:2 Volume:15 Page:021410
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Avizemer Dan¹,Dmitriev Vladimir¹,Hibbs Michael²

Affiliation:

1. Carl Zeiss SMS Ltd., 44 Maale Camon, Karmiel 21613, Israel

2. Global Foundries, 1000 River Street, Essex Junction, Vermont 05452, United States

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. International technology roadmap for semiconductors, 2013 edition, lithography,2016

2. Intra-field on-product overlay improvement by application of RegC and TWINSCAN corrections

3. Correcting image placement errors using registration control (RegC) technology in the photomask periphery

4. Critical dimension control using ultrashort laser for improving wafer critical dimension uniformity

5. Micromachining bulk glass by use of femtosecond laser pulses with nanojoule energy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improve photomask writing error using Registration Correction (RegC) technology;2023 International Workshop on Advanced Patterning Solutions (IWAPS);2023-10-26

2. Enhanced wafer overlay residuals control: deep sub-nanometer at sub-millimeter lateral resolution;35th European Mask and Lithography Conference (EMLC 2019);2019-08-29

3. Enhanced wafer overlay residuals control; deep sub-nanometer at sub-millimeter lateral resolution;Metrology, Inspection, and Process Control for Microlithography XXXIII;2019-03-26