Optimization of resist parameters to improve the profile and process window of the contact pattern in advanced node

Author:

Dong Lisong1,Zhang Libin1,Su Xiaojing1,Song Zhiyang1,Wei Yayi2,Ye Tianchun2

Affiliation:

1. Institute of Microelectronics of the Chinese Academy of Sciences, Key Laboratory of Microelectronics Devices and Integrated Technology, No. 3, Bei-Tu-Cheng West Road, Beijing 100029, China

2. Institute of Microelectronics of the Chinese Academy of Sciences, Key Laboratory of Microelectronics Devices and Integrated Technology, No. 3, Bei-Tu-Cheng West Road, Beijing 100029, ChinabUniversity of Chinese Academy of Sciences, No. 19, Yu-Quan Road, Beijing 100049, China

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Analysis on the influence of several parameters in physical resist models;2021 International Workshop on Advanced Patterning Solutions (IWAPS);2021-12-12

2. Optimization of the focus monitor mark in immersion lithography according to illumination type;Journal of Micro/Nanolithography, MEMS, and MOEMS;2017-08-24

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