Optimization of resist parameters to improve the profile and process window of the contact pattern in advanced node-Reference-Cited by-同舟云学术

Optimization of resist parameters to improve the profile and process window of the contact pattern in advanced node

Published:2016-12-20 Issue:4 Volume:15 Page:043509
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Dong Lisong¹,Zhang Libin¹,Su Xiaojing¹,Song Zhiyang¹,Wei Yayi²,Ye Tianchun²

Affiliation:

1. Institute of Microelectronics of the Chinese Academy of Sciences, Key Laboratory of Microelectronics Devices and Integrated Technology, No. 3, Bei-Tu-Cheng West Road, Beijing 100029, China

2. Institute of Microelectronics of the Chinese Academy of Sciences, Key Laboratory of Microelectronics Devices and Integrated Technology, No. 3, Bei-Tu-Cheng West Road, Beijing 100029, ChinabUniversity of Chinese Academy of Sciences, No. 19, Yu-Quan Road, Beijing 100049, China

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Free form source and mask optimization for negative tone resist development for 22nm node contact holes

2. Development of Materials and Processes for Double Patterning toward 32nm Node ArF Immersion Lithography

3. Fundamental investigation of negative tone development (NTD) for the 22nm node (and beyond)

4. Density Multiplication and Improved Lithography by Directed Block Copolymer Assembly

5. Block Copolymer Self-Assembly–Directed Single-Crystal Homo- and Heteroepitaxial Nanostructures

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1. Analysis on the influence of several parameters in physical resist models;2021 International Workshop on Advanced Patterning Solutions (IWAPS);2021-12-12

2. Optimization of the focus monitor mark in immersion lithography according to illumination type;Journal of Micro/Nanolithography, MEMS, and MOEMS;2017-08-24