Systematic framework for evaluating standard cell middle-of-line robustness for multiple patterning lithography

Author:

Xu Xiaoqing1,Cline Brian2,Yeric Greg2,Yu Bei3,Pan David Z.1

Affiliation:

1. The University of Texas at Austin, ECE Department, 201 East 24th Street, Stop C8800, Austin, Texas 78712, United States

2. ARM Inc., 5707 Southwest Parkway #100, Austin, Texas 78735, United States

3. Chinese University of Hong Kong, CSE Department, Shatin, NT, Hong Kong

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Decomposition-aware standard cell design flows to enable double-patterning technology

2. Design for Manufacturing With Emerging Nanolithography

3. Implications of triple patterning for 14nm node design and patterning

4. Intel sees quad-patterned path to 10-nm chips;Merritt,2012

5. Self-aligned double patterning aware pin access and standard cell layout co-optimization;Xu,2014

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