The influence of sunlight irradiation on the characteristics of InGaAs detectors-Reference-Cited by-同舟云学术

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The influence of sunlight irradiation on the characteristics of InGaAs detectors

Published:2014-10-07 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Shao Xiumei,Zhu Yaoming,Li Xue,Tang Hengjing,Li Tao,Gong Haimei

Publisher

SPIE

Reference10 articles.

1. Analysis and evaluation of uniformity of SWIR InGaAs FPA—Part I: Material issues

2. Electron transport in direct-gap III-V ternary alloys

3. Radiation Effects in InGaAs and Microbolometer Infrared Sensor Arrays for Space Application;Hopkinson,2008

4. Mesa-isolated InGaAs avalanche photodiode damage by ionizing radiation;Huntington,2011

5. Investigation and modeling of space radiation effects in quantum dot solar cells;Fedoseyev,2010

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advanced liquid crystal-based switchable optical devices for light protection applications: principles and strategies;Light: Science & Applications;2023-01-03

2. Short-wave infrared InGaAs photodetectors and focal plane arrays;Chinese Physics B;2018-12

3. The simulation of localized surface plasmon and surface plasmon polariton in wire grid polarizer integrated on InP substrate for InGaAs sensor;AIP Advances;2015-07

4. Subwavelength Gold Grating as Polarizers Integrated with InP-Based InGaAs Sensors;ACS Applied Materials & Interfaces;2015-06-26

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