Blank defect coverage budget for 16nm half-pitch single EUV exposure-Reference-Cited by-同舟云学术

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Blank defect coverage budget for 16nm half-pitch single EUV exposure

Published:2018-06-12 Issue: Volume: Page:
ISSN:
Container-title:Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology
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Author:

Jonckheere Rik,Yamane Takeshi,Kamo Takashi,Morikawa Yasutaka

Publisher

SPIE

Reference5 articles.

1. Overcoming EUV Mask Blank Defects: What we can, and what we should;Jonckheere,2017

2. ABI tool performance confirmation by NXE3300 printing results for native EUV blank defects at 16nm half pitch;Jonckheere,2016

3. EUV Mask Fabrication Toward High Volume Manufacturing;Zhang,2016

4. Printability estimation of EUV blank defect using actinic image;Yamane,2018

5. Application of EUV dark-field image for EUVL mask fabrication;Yamane,2017

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1. 极紫外光刻掩模相位型缺陷检测方法;Acta Optica Sinica;2023

2. Evolution of patterning materials towards the Moore’s Law 2.0 Era;Japanese Journal of Applied Physics;2022-04-19

3. Metal layer single EUV expose at pitch 28: how bright field and NTD resist advantages align;Extreme Ultraviolet (EUV) Lithography XII;2021-02-22

4. Fast optimization of defect compensation and optical proximity correction for extreme ultraviolet lithography mask;Optics Communications;2019-12

5. Stochastic printing behavior of ML-defects on EUV mask;International Conference on Extreme Ultraviolet Lithography 2019;2019-10-24

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