1. Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner;van de Kerkhof,2017
2. “ 2017 eBeam Initiative Mask Maker Survey Results”, http://www.ebeam.org/docs/ebeam_survey_mask_2017.pdf?v=2 (09/2017)
3. Printability and actinic AIMS review of programmed mask blank defects;Verduijn,2017
4. N7 dark field two-bar in 0.33NA EUVL: Mitigation of CD Bossung tilts caused by strong coupling between the feature’s primary and 1st self-image;Last,2017
5. Reducing EUV mask 3D effects by alternative metal absorbers;Philipsen,2017