Edge placement error control and Mask3D effects in High-NA anamorphic EUV lithography-Reference-Cited by-同舟云学术

Edge placement error control and Mask3D effects in High-NA anamorphic EUV lithography

Published:2017-10-30 Issue: Volume: Page:
ISSN:
Container-title:International Conference on Extreme Ultraviolet Lithography 2017
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Author:

van Setten Eelco,Bottiglieri Gerardo,de Winter Laurens,Lubkoll Jan,McNamara John,Rusu Paul,Rispens Gijsbert,van Schoot Jan,Neumann Jens Timo,Roesch Matthias,Kneer Bernhard

Publisher

SPIE

Reference20 articles.

1. Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner;van de Kerkhof,2017

2. EUV lithography scanner for sub 8 nm resolution;van Schoot,2015

3. The future of EUV lithography: enabling Moore’s law in the next decade;Pirati,2017

4. High-numerical aperture extreme ultraviolet scanner for 8-nm lithography and beyond;van Schoot;J. Micro/Nanolith. MEMS MOEMS,2017

5. Overlay and edge placement control strategies for the 7nm node using EUV and ArF lithography;Mulkens,2015

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