3D-profile measurement of advanced semiconductor features by reference metrology-Reference-Cited by-同舟云学术

3D-profile measurement of advanced semiconductor features by reference metrology

Published:2016-03-24 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Takamasu Kiyoshi¹,Iwaki Yuuki¹,Takahashi Satoru¹,Kawada Hiroki²,Ikota Masami²,Lorusso Gian F.³,Horiguchi Naoto³

Affiliation:

1. The Univ. of Tokyo (Japan)

2. Hitachi High-Technologies Corp. (Japan)

3. IMEC (Belgium)

Publisher

SPIE

Reference9 articles.

1. Sub-nanometer line width and lineprofile measurement,;Takamasu,2011

2. A novel approach to measuring linewidth with subnanometer accuracy,;Takamasu,2012

3. Sub-nanometer calibration of line width measurement and line edge detection by using STEM and sectional SEM

4. Sidewallroughness and line profile measurement of photoresist and FinFET features by cross-section STEM and TEM Image for reference metrology,;Takamasu,2014

5. Line Profile Measurement of Advanced-FinFET Features by Reference Metrology,;Takamasu,2015

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