Accurate mask model implementation in OPC model for 14nm nodes and beyond-Reference-Cited by-同舟云学术

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Accurate mask model implementation in OPC model for 14nm nodes and beyond

Published:2015-10-23 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Zine El Abidine Nacer,Sundermann Frank,Yesilada Emek,Farys Vincent,Huguennet Frederic,Armeanu Ana-Maria,Bork Ingo,Chomat Michael,Buck Peter,Schanen Isabelle

Publisher

SPIE

Reference6 articles.

1. Accurate Mask Model for Advanced Nodes;ZINE EL ABIDINE,2014

2. Adjustment of optical proximity correction (OPC) software for mask process correction (MPC). Module 1: Optical mask writing tool simulation;BARBERET,2002

3. Adjustment of optical proximity correction (OPC) software for mask process correction (MPC); Module 2: Lithography simulation based on optical mask writing tool simulation;BARBERET,2002

4. Integrated mask and optics simulations for mask corner rounding effect in OPC modeling

5. Three Dimensional Mask Effects in OPC Process Model Development from First Principles Simulation;MELVIN III,2008

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Aerial image metrology for OPC modeling and mask qualification;33rd European Mask and Lithography Conference;2017-09-28

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