Aerial image metrology for OPC modeling and mask qualification-Reference-Cited by-同舟云学术

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Aerial image metrology for OPC modeling and mask qualification

Published:2017-09-28 Issue: Volume: Page:
ISSN:
Container-title:33rd European Mask and Lithography Conference
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Author:

Chen Ao,Foong Yee Mei,Chung Angeline,De Bisschop Peter,Thaler Thomas,Buttgereit Ute,Burbine Andrew,Sturtevant John,Clifford Chris,Adam Kostas

Publisher

SPIE

Reference15 articles.

1. WLCD: A new System for Wafer Level CD Metrology on Photomasks;Martin,2009

2. Mask phase and transmission variation effects on wafer critical dimensions for nodes 65nm and 45nm;Dufaye,2010

3. Using the AIMS 45-193i for hyper-NA imaging applications

4. Modeling metrology for calibration of OPC models;Mack,2016

5. Advanced Mask Process Modeling for 45-nm and 32-nm Nodes;Tejnil,2008

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1. Lithography hotspot detection through multi-scale feature fusion utilizing feature pyramid network and dense block;Journal of Micro/Nanopatterning, Materials, and Metrology;2024-02-10

2. Lithography Hotspot Detection Based on Improved Yolov5s;LASER OPTOELECTRON P;2023

3. Lithography Hotspot Detection Based on Yolov5;2022 International Workshop on Advanced Patterning Solutions (IWAPS);2022-10-21

4. Improving OPC model accuracy and stability with aerial image contribution;2022 International Workshop on Advanced Patterning Solutions (IWAPS);2022-10-21

5. Improving ORC methods and hotspot detection with the usage of aerial image metrology;Optical Microlithography XXXIII;2020-03-23

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