Double patterning requirements for optical lithography and prospects for optical extension without double patterning-Reference-Cited by-同舟云学术

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Double patterning requirements for optical lithography and prospects for optical extension without double patterning

Published:2008-03-14 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Optical Microlithography XXI
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Author:

Hazelton Andrew J.,Wakamoto Shinji,Hirukawa Shigeru,McCallum Martin,Magome Nobutaka,Ishikawa Jun,Lapeyre Céline,Guilmeau Isabelle,Barnola Sébastien,Gaugiran Stéphanie

Publisher

SPIE

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Overlay error statistics for multiple-exposure patterning;Journal of Micro/Nanolithography, MEMS, and MOEMS;2019-04-04

2. Overlay statistics for multiple exposure patterning;SPIE Proceedings;2017-03-28

3. Plasma etch patterning of EUV lithography: balancing roughness and selectivity trade off;SPIE Proceedings;2016-03-23

4. 64nm pitch metal1 double patterning metrology: CD and OVL control by SEMCD, image based overlay and diffraction based overlay;SPIE Proceedings;2015-04-10

5. Scatterometry-based metrology for the 14nm node double patterning lithography;SPIE Proceedings;2015-03-19

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