Direct measurement of carbon contamination topography on patterned EUV masks-Reference-Cited by-同舟云学术

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Direct measurement of carbon contamination topography on patterned EUV masks

Published:2014-04-17 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Fan Yu-Jen¹,Murray Thomas²,Goodwin Frank¹,Ashworth Dominic¹,Denbeaux Gregory²

Affiliation:

1. SEMATECH Inc. (United States)

2. SUNY College of Nanoscale Science and Engineering (United States)

Publisher

SPIE

Reference10 articles.

1. Effect of carbon contamination on the printing performance of extreme ultraviolet masks

2. Carbon contamination topography analysis of EUV masks;Fan,2010

3. Carbon accumulation and mitigation processes, and secondary electron yields of ruthenium surfaces;Yakshinskiy,2007

4. Relationship between resist related outgassing and witness sample contamination in the NXE outgas qualification using electrons and EUV;Pollentier,2013

5. Optimizing XPS tool performance for characterizing trace contamination elements for EUV resist outgas testing;Upadhyaya,2013

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First results of outgas resist family test and correlation between outgas specifications and EUV resist development;SPIE Proceedings;2015-03-16

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