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Study of alternative capping and absorber layers for extreme ultraviolet (EUV) masks for sub-16nm half-pitch nodes

  • Published:2014-04-17 Issue: Volume: Page:
  • ISSN:0277-786X
  • Container-title:SPIE Proceedings
  • language:
  • Short-container-title:

Author:

Rastegar Abbas1,House Matthew1,Tian Ruahi1,Laursen Thomas2,Antohe Alin1,Kearney Patrick1

Affiliation:

1. SEMATECH Inc. (United States)

2. SUNY College of Nanoscale Science and Engineering (United States)

Publisher

SPIE

Reference26 articles.

1. EUV mask defects and their removal;Rastegar,2012

2. Multilayer reflective coatings for EUVL;Montcalm,1998

3. Improved reflectance and stability of Mo/Si multilayers;Bajt,2001

4. Protective capping layer for EUVL optics using TiO2;Bajt,2005

5. Protection of Mo/Si multilayers with a carbon capping layer;Yakshin,2001

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1. Attenuated phase shift masks: a wild card resolution enhancement for extreme ultraviolet lithography?;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-05-11

2. Nanoscale focused electron beam induced etching of nickel using a liquid reactant;Nanotechnology;2020-07-27

3. Assessing stability of metal tellurides as alternative photomask materials for extreme ultraviolet lithography;Journal of Vacuum Science & Technology B;2019-11

4. Ion beam etch for the patterning of advanced absorber materials for EUV masks;Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology;2019-06-27

5. Ion beam etching of new absorber materials for sub-5nm EUV masks;Extreme Ultraviolet (EUV) Lithography X;2019-03-26
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