Escaping death: single-patterning contact printing for <inline-formula><math display="inline" overflow="scroll"><mrow><mn mathvariant="bold">32</mn><mo mathvariant="bold">/</mo><mn mathvariant="bold">28</mn></mrow></math></inline-formula>-nm logic technology nodes-Reference-Cited by-同舟云学术

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Escaping death: single-patterning contact printing for $32 / 28$ -nm logic technology nodes

Published:2012-03-19 Issue:1 Volume:11 Page:013010
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Morgenfeld Bradley

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Double-patterning requirements for optical lithography and prospects for optical extension without double patterning

2. Contact patterning strategies for 32nm and 28nm technology

3. Morgenfeld, B. et al., “Strategies for single patterning of contacts for 32 nm and 28 nm technology,” in 22nd Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC), Saratoga Springs, NY (2011).

4. Single exposure contacts are dead. Long live single exposure contacts!

5. Kawasaki, H. et al., “Demonstration of highly scaled FinFET SRAM cells with high-κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond,” in IEEE Electron Devices Meeting, IEDM (2008).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterizing interlayer edge placement with SEM contours;Journal of Micro/Nanolithography, MEMS, and MOEMS;2019-04-15

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