Quantitative measurement of voltage contrast in scanning electron microscope images for in-line resistance inspection of incomplete contact-Reference-Cited by-同舟云学术

Quantitative measurement of voltage contrast in scanning electron microscope images for in-line resistance inspection of incomplete contact

Published:2012-06-07 Issue:2 Volume:11 Page:023008-1
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Matsui Miyako,Yano Tasuku,Odaka Takayuki,Nagaishi Hiroshi,Sakurai Koichi

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. “ITRS Roadmap,” International Technology Roadmap for Semiconductors (2011).

2. New voltage-contrast imaging method for detection of electrical failures

3. Open-contact failure detection of via holes by using voltage contrast

4. Advanced inspection technique for deep-submicron and high-aspect-ratio contact holes

5. Detecting Defects in Cu Metallization Structures by Electron-Beam Wafer Inspection

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