Sensitivity and hysteresis properties of a-WO3,Ta2O5, and a-Si:H gate ion-sensitive field-effect transistors
Author:
Publisher
SPIE-Intl Soc Optical Eng
Subject
General Engineering,Atomic and Molecular Physics, and Optics
Reference17 articles.
1. Development of an Ion-Sensitive Solid-State Device for Neurophysiological Measurements
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