Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity-Reference-Cited by-同舟云学术

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Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity

Published:2016-09 Issue: Volume:163 Page:115-118
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Wen Jiao,Liu Qiang,Liu Chang,Wang Yize,Zhang Bo,Xue Zhongying,Di Zengfeng,Min Jiahua,Yu Wenjie,Liu Xinke,Wang Xi,Zhao Qing-Tai

Funder

National Natural Science Foundation of China

CAS

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Development of an ion-sensitive solid-state device for neurophysiological measurements;Bergveld;IEEE Trans. Biomed. Eng.,1970

2. ISFET based microsensors for environmental monitoring;Jimenez-Jorquera;Sensors,2010

3. Development of a highly-sensitive acetylcholine sensor using a charge-transfer technique on a smart biochip;Lee;Trends Anal. Chem.,2009

4. Label-free detection of small-molecule-protein interactions by using nanowire nanosensors;Wang;PNAS,2005

5. Sensitivity and specificity improvement of an ion sensitive field effect transistors-based biosensor for potato glycoalkaloids detection;Korpan;J. Agric. Food Chem.,2006

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1. Impact of biomolecules position and filling area on the sensitivity of hetero stack gate MOSFET;Microelectronics Journal;2022-08

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