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Wafer-shape based in-plane distortion predictions using Superfast 4G metrology

  • Published:2017-03-28 Issue: Volume: Page:
  • ISSN:0277-786X
  • Container-title:SPIE Proceedings
  • language:
  • Short-container-title:

Author:

van Dijk Leon1,Mileham Jeffrey2,Malakhovsky Ilja1,Laidler David3,Dekkers Harold3,Van Elshocht Sven3,Anberg Doug2,Owen David M.2,van Haren Richard1

Affiliation:

1. ASML Netherlands B.V. (Netherlands)

2. Ultratech, Inc. (United States)

3. IMEC (Belgium)

Publisher

SPIE

Reference9 articles.

1. Characterization of wafer geometry and overlay error on silicon wafers with nonuniform stress

2. Lithography overlay control improvement using patterned wafer geometry for sub 22 nm technology nodes;Peterson,2015

3. Improvement of process control using wafer geometry for enhanced manufacturability of advanced semiconductor devices;Lee,2015

4. A study of feed-forward strategies for overlay control in lithography processes using CGS technology;Anberg,2015

5. Patterned wafer geometry (PWG) metrology for improving process-induced overlay and focus problems;Brunner,2016

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New wave front phase sensor used for 3D shape measurements of patterned silicon wafers;38th European Mask and Lithography Conference (EMLC 2023);2023-10-05

2. A study of high-accuracy stand-alone wafer metrology tool for high-productivity of exposure apparatus;Metrology, Inspection, and Process Control XXXVII;2023-04-27

3. Overlay performance in permanent bonded wafer integration schemes;Metrology, Inspection, and Process Control XXXVII;2023-04-27

4. Computational overlay as enabler for enhanced on-product overlay control;2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2022-05-02
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