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Application of EUV dark field image for EUVL mask fabrication

  • Published:2017-07-13 Issue: Volume: Page:
  • ISSN:0277-786X
  • Container-title:SPIE Proceedings
  • language:
  • Short-container-title:

Author:

Yamane Takeshi1,Watanabe Hidehiro1

Affiliation:

1. EIDEC (Japan)

Publisher

SPIE

Reference6 articles.

1. Concept of ultra-fast at-wavelength inspection of defects on multilayer mask blanks using a laser-produced plasma source;Tomie,2003

2. Method and apparatus for inspecting multilayer masks for defects;Tomie,2005

3. Sensitivity-Limiting Factors of at-Wavelength Extreme Ultraviolet Lithography Mask Blank Inspection

4. Development of actinic full-field EUV mask blank inspection tool at MIRAI-Selete;Terasawa,2009

5. EUV actinic blank inspection: from prototype to production;Tchikoulaeva,2013

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Capability of DUV inspection for the LWR improved EUV mask of sub-15 nm hp on wafer;Photomask Technology 2019;2019-09-29

2. Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope;Journal of Micro/Nanolithography, MEMS, and MOEMS;2019-09-28

3. Blank defect coverage budget for 16nm half-pitch single EUV exposure;Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology;2018-06-12

4. Printability estimation of EUV blank defect using actinic image;Extreme Ultraviolet (EUV) Lithography IX;2018-03-19

5. DUV inspection beyond optical resolution limit for EUV mask of hp 1X nm;Photomask Technology;2017-10-16
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