Integrated fab process for metal oxide EUV photoresist-Reference-Cited by-同舟云学术

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Integrated fab process for metal oxide EUV photoresist

Published:2015-03-23 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Advances in Patterning Materials and Processes XXXII
language:
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Author:

Grenville Andrew,Anderson Jeremy T.,Clark Benjamin L.,De Schepper Peter,Edson Joseph,Greer Michael,Jiang Kai,Kocsis Michael,Meyers Stephen T.,Stowers Jason K.,Telecky Alan J.,De Simone Danilo,Vandenberghe Geert

Publisher

SPIE

Reference7 articles.

1. http://www.itrs.net/

2. Understanding the Role of Acid vs. Electron Blur in EUV Resist Materials

3. Directly patterned inorganic hardmask for EUV lithography

4. Evaluation of EUV resist performance with interference lithography towards 11 nm half-pitch and beyond

5. http://cxro.lbl.gov

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1. Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography;Micromachines;2024-08-31

2. Approaching Angstrom-Scale Resolution in Lithography Using Low-Molecular-Mass Resists (<500 Da);ACS Nano;2024-08-20

3. Layer-Ordered Organooxotin Clusters for Extreme-Ultraviolet Photolithography;ACS Applied Materials & Interfaces;2024-07-22

4. Effects of substituents in triphenylsulfonium cation on its radiation-induced decomposition and dissolution kinetics of chemically amplified resists;Japanese Journal of Applied Physics;2024-07-01

5. Design strategy of extreme ultraviolet resists;Japanese Journal of Applied Physics;2024-05-01

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