Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications-Reference-Cited by-同舟云学术

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Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications

Published:2015-02-27 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Reboud Vincent,Widiez Julie,Hartmann Jean Michel,Osvaldo Dias Guilherme,Fowler Daivid,Chelnokov Alexei,Gassenq Alban,Guilloy Kevin,Pauc Nicolas,Calvo Vincent,Geiger Richard,Zabel T.,Faist Jérôme,Sigg Hans

Publisher

SPIE

Reference17 articles.

1. Germanium avalanche receiver for low power interconnects

2. Optical modulator on silicon employing germanium quantum wells

3. Band lineups and deformation potentials in the model-solid theory

4. Enhanced photoluminescence of heavily n-doped germanium;El Kurdi,2009

5. Structural, electrical and optical properties of in-situ phosphorous-doped Ge layers

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Germanium thin film manufacturing using covalent bonding process;Semiconductor Science and Technology;2022-02-28

2. Lasing in Group-IV Materials;Topics in Applied Physics;2021

3. Influence of layer transfer and thermal annealing on the properties of InAs-On-Insulator films;Journal of Applied Physics;2020-07-07

4. Direct-Bandgap Electroluminescence From Germanium With Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure;IEEE Transactions on Electron Devices;2020-05

5. Strained Germanium Lasing in the Mid-Infrared;2019 IEEE 16th International Conference on Group IV Photonics (GFP);2019-08

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