Structural, electrical and optical properties of in-situ phosphorous-doped Ge layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
2. Towards a Ge-based laser for CMOS applications
3. Enhanced photoluminescence of heavily n-doped germanium
4. Direct gap photoluminescence of n-type tensile-strained Ge-on-Si
5. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes
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1. Point defect formation near the epitaxial Ge(001) growth surface and the impact on phosphorus doping activation;Journal of Applied Physics;2021-09-28
2. Ultra-high phosphorus-doped epitaxial Ge layers grown by HWCVD method on Si substrates;Materials Science in Semiconductor Processing;2019-09
3. Investigation of in-situ co-doping by Sb and P of germanium films grown on Si(001) by molecular beam epitaxy;Journal of Applied Physics;2018-04-07
4. In situphosphorus-doped Ge1−xSnxlayers grown using low-temperature metal-organic chemical vapor deposition;Semiconductor Science and Technology;2017-10-26
5. The impact of donors on recombination mechanisms in heavily doped Ge/Si layers;Journal of Applied Physics;2017-06-28
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