Self-aligned double-patterning layout decomposition for two-dimensional random metals for sub-10-nm node design-Reference-Cited by-同舟云学术

Self-aligned double-patterning layout decomposition for two-dimensional random metals for sub-10-nm node design

Published:2014-12-04 Issue:1 Volume:14 Page:011004
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Ban Yongchan¹,Pan David Z.²

Affiliation:

1. System IC R&D Lab., LG Electronics, Seoul 137-893, Republic of Korea

2. University of Texas, Department of Electrical and Computer Engineering, Austin, Texas 78712, United States

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. A new graph theoretic, multi objective layout decomposition framework for double patterning lithography;Yang,2010

2. Electrical impact of line-edge roughness on sub-45-nm node standard cells

3. Modeling and characterization of contact-edge roughness for minimizing design and manufacturing variations

4. Timing Yield-Aware Color Reassignment and Detailed Placement Perturbation for Bimodal CD Distribution in Double Patterning Lithography

5. Double patterning lithography for $32 nm$ : critical dimensions uniformity and overlay control considerations

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