A novel methodology for litho-to-etch pattern fidelity correction for SADP process

Author:

Chen Shr-Jia1,Chang Yu-Cheng1,Lin Arthur2,Chang Yi-Shiang1,Lin Chia-Chi1,Lai Jun-Cheng1

Affiliation:

1. Powerchip Technology Corp. (Taiwan)

2. KLA-Tencor Taiwan (Taiwan)

Publisher

SPIE

Reference13 articles.

1. C. A. Mack, [The Multiple Lives of Moore's Law], (30 Mar 2015).

2. Cramming more components onto integrated circuits, Reprinted from Electronics, volume 38, number 8, April 19, 1965, pp.114 ff.

3. W.-Y. Jung, S.-M. Kim, C.-D. Kim et al., “Patterning with amorphous carbon spacer for expanding the resolution limit of current lithography tool.” Proc. SPIE 6520, 65201C–65201C-9.

4. H. Yaegashi, E. Nisimura, K. Hasebe et al., “Implementation of double patterning process toward 22-nm node.” Proc. SPIE 7520, 75201E–75201E-9.

5. H. Yaegashi, K. Oyama, K. Yabe et al., “Novel approaches to implement the self-aligned spacer double-patterning process toward 11-nm node and beyond.” Proc. SPIE 7972, 79720B–79720B-7.

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