72 nm Pitch Hexagonal MTJ Array on DRAM Platform for High-Density MRAM
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/20/9577233/09548067.pdf?arnumber=9548067
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Selective Data Writing in IrMn-Based Perpendicular Magnetic Tunnel Junction Array Through Voltage-Gated Spin-Orbit Torque;IEEE Electron Device Letters;2024-05
2. Pitch Scaling Prospect of Ultra-Small Magnetic Tunnel Junctions for High-Density STT-MRAM: Effects of Magnetostatic Interference From Neighboring Bits;IEEE Electron Device Letters;2024-02
3. Modeling and Analysis of Magnetic Field-Induced Coupling on Hexagonal MTJ Array;IEEE Transactions on Magnetics;2023-03
4. Modeling and Analysis of Mtj Array with Shielding Layer;2023
5. High density hexagonal MTJ array with 72 nm pitch and 30 nm CD by using advanced DRAM patterning solution and ion beam etch;AIP Advances;2022-03-01
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