Line edge roughness frequency analysis for SAQP process

Author:

Sun Lei,Zhang Xiaoxiao,Levi Shimon,Ge Adam,Zhou Hua,Wang Wenhui,Krishnan Navaneetha,Chen Yulu,Verduijn Erik,Kim Ryoung-han

Publisher

SPIE

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A Study of Image Contrast, Stochastic Defectivity, and Optical Proximity Effect in EUV Photolithographic Process Under Typical 5 nm Logic Design Rules;2020 China Semiconductor Technology International Conference (CSTIC);2020-06-26

2. Analysis of Linewidth Uniformity and Line Edge/Width Roughness in a 5 nm Logic SAQP Process;2020 China Semiconductor Technology International Conference (CSTIC);2020-06-26

3. Line edge roughness metrology: recent challenges and advances toward more complete and accurate measurements;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-10-13

4. Introduction of pre-etch deposition techniques in EUV patterning;Advanced Etch Technology for Nanopatterning VII;2018-04-09

5. Line edge roughness reduction for 7nm metals;Optical Microlithography XXXI;2018-03-20

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